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| BUL742C HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BUL742C s s s Marking BUL742C Package / Shipment TO-220 / Tube s HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 1 2 APPLICATIONS: s s ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES TO-220 DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0, IB < 2 A, tp < 10 ms) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature Value 1050 400 V(BR)EBO 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W C C April 2003 1/7 BUL742C THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.79 62.5 C/W C/W ELECTRICAL CHARACTERISTICS (Tj = 25 C unless otherwise specified) Symbol ICES ICEO V(BR)EBO Parameter Collector Cut-off Current (VBE = 0) Collector Cut-off Current (IB = 0) Emitter-Base Breakdown Voltage (IC = 0) Collector-Emitter Sustaining Voltage (IB = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time Repetitive Avalanche Energy VCE = 1050 V VCE = 400 V IE = 1 mA 12 Test Conditions Min. Typ. Max. 100 250 24 Unit A A V VCEO(sus)* IC = 10 mA 400 V VCE(sat)* VBE(sat)* hFE* IC = 1 A IC = 3.5 A IC = 3.5 A IC = 0.1 A IC = 0.8 A IC = 2 A IB1 = -IB2 = 400 mA VBB(off) = -5 V L = 2 mH VBE = -5 V IB = 0.2 A IB = 1 A IB = 1 A VCE = 5 V VCE = 3 V VCC = 125 V tp = 300 s (See Figure 1) C = 1.8 nF (See Figure 2) 6 48 25 2.4 350 0.5 1.5 1.5 100 50 V V V ts tf Ear s ns mJ * Pulsed: Pulse duration = 300 s, duty cycle = 1.5 %. 2/7 BUL742C Safe Operating Area Derating Curve Output Characteristics DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage 3/7 BUL742C Base-Emitter Saturation Voltage Resistive Load Switching On Times Resistive Load Switching Off Times Resistive Load Switching On Times Resistive Load Switching Off Times Reverse Biased Safe Operating Area 4/7 BUL742C Figure 1: Resistive Load Switching Test Circuit 1) Fast Electronic Switch 2) Non-Inductive Resistor Figure 2: Energy Rating Test Circuit 5/7 BUL742C TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 P011CI 6/7 BUL742C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 7/7 |
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